?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 hgtg20N60A4D 600v, smps series n-channel igbt with anti-parallel hyperfast diode the hgtg20N60A4D is a mos gated high voltage switching device combining the best featur es of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt used is the development type ta49339. the diode used in anti-parallel is the development type ta49372. this igbt is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. this device has been optimized for high frequency switch mode power supplies . formerly developmental type ta49341. symbol features ? >100khz operation at 390v, 20a ? 200khz operation at 390v, 12a ? 600v switching soa capability ? typical fall time . . . . . . . . . . . . . . . . 55ns at t j = 125 o c ? low conduction loss ? temperature compensating saber? model www.fairchildsemi.com packaging jedec style to-247 ordering information part number package brand hgtg20N60A4D to-247 20N60A4D note: when ordering, use the entire part number. c e g collector (flange) fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet february 2009 free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 absolute m aximum ratings t c = 25 o c, unless otherwise specified hgtg20N60A4D units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 70 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 40 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 280 a diode continuous forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fm110 20 a diode maximum forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i fm 80 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 100a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 290 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note 1: pulse width limited by maximum junction temperature. electrical specifications t j = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = 600v t j = 25 o c - - 250 a t j = 125 o c--3.0ma collector to emitter saturation voltage v ce(sat) i c = 20a, v ge = 15v t j = 25 o c-1.82.7v t j = 125 o c-1.62.0v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = 600v 4.5 5.5 7.0 v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 3 , v ge = 15v, l = 100 h, v ce = 600v 100 - - a gate to emitter plateau voltage v gep i c = 20a, v ce = 300v - 8.6 - v on-state gate charge q g(on) i c = 20a, v ce = 300v v ge = 15v - 142 162 nc v ge = 20v - 182 210 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c, i ce = 20a, v ce = 390v, v ge = 15v, r g = 3 , l = 500 h, test circuit figure 24 -15 - ns current rise time t ri -12 - ns current turn-off delay time t d(off)i -73 - ns current fall time t fi -32 - ns turn-on energy (note 3) e on1 - 105 - j turn-on energy (note 3) e on2 - 280 350 j turn-off energy (note 2) e off - 150 200 j current turn-on delay time t d(on)i igbt and diode at t j = 125 o c, i ce = 20a, v ce = 390v, v ge = 15v, r g = 3 , l = 500 h, test circuit figure 24 -1521ns current rise time t ri -1318ns current turn-off delay time t d(off)i - 105 135 ns current fall time t fi -5573ns turn-on energy (note 3) e on1 - 115 - j turn-on energy (note 3) e on2 - 510 600 j turn-off energy (note 2) e off - 330 500 j hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 diode forward voltage v ec i ec = 20a - 2.3 - v diode reverse recovery time t rr i ec = 20a, di ec /dt = 200a/ s-35-ns i ec = 1a, di ec /dt = 200a/ s-26-ns thermal resistance junction to case r jc igbt - - 0.43 o c/w diode - - 1.9 o c/w note: 1. turn-off energy loss (e off ) is defined as the integral of the instantaneous power lo ss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per je dec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. 2. values for two turn-on loss conditions are s hown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 20. electrical specifications t j = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time t c , case temperature ( o c) i ce , dc collector current (a) 50 20 0 80 40 60 25 75 100 125 150 100 v ge = 15v package limit die capability v ce , collector to emitter voltage (v) 700 60 0 i ce , collector to emitter current (a) 20 300 400 200 100 500 600 0 80 100 40 120 t j = 150 o c, r g = 3 , v ge = 15v, l = 100 h f max , operating frequency (khz) 5 i ce , collector to emitter current (a) 40 300 50 10 20 500 t j = 125 o c, r g = 3 , l = 500 h, v ce = 390v 100 40 30 f max1 = 0.05 / (t d(off)i + t d(on)i ) r eeejc = 0.43 o c/w, see no p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c v ge 15v 75 o c v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 10 11 12 15 0 2 10 100 250 350 450 14 13 14 4 6 8 12 150 200 300 400 v ce = 390v, r g = 3 , t j = 125 o c t sc i sc hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 figure 5. collector to emitter on-state voltage f igure 6. collector to em itter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current typical performance curves unless otherwise specified (continued) 00.81.2 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 20 40 1.6 2.0 3.2 80 60 t j = 125 o c t j = 150 o c pulse duration = 250 s duty cycle < 0.5%, v ge = 12v 100 t j = 25 o c 0.4 2.4 2.8 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) duty cycle < 0.5%, v ge = 15v pulse duration = 250 s t j = 150 o c t j = 25 o c t j = 125 o c 0 20 40 80 60 100 0 0.8 1.2 1.6 2.0 0.4 2.4 2.8 e on2 , turn-on energy loss ( j) 1000 600 i ce , collector to emitter current (a) 800 400 1200 0 15 10 20 25 30 35 40 t j = 125 o c, v ge = 12v, v ge = 15v r g = 3 , l = 500 h, v ce = 390v t j = 25 o c, v ge = 12v, v ge = 15v 200 5 1400 600 i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 0 100 400 200 500 700 800 t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v 300 r g = 3 , l = 500 h, v ce = 390v 15 10 20 25 30 35 40 5 i ce , collector to emitter current (a) t d(on)i , turn-on delay time (ns) 8 14 16 18 20 22 15 10 20 25 30 35 40 5 t j = 25 o c, t j = 125 o c, v ge = 15v t j = 25 o c, t j = 125 o c, v ge = 12v r g = 3 , l = 500 h, v ce = 390v 12 10 i ce , collector to emitter current (a) t ri , rise time (ns) 4 8 20 16 12 24 36 32 28 r g = 3 , l = 500 h, v ce = 390v t j = 25 o c, t j = 125 o c, v ge = 12v t j = 25 o c or t j = 125 o c, v ge = 15v 15 10 20 25 30 35 40 5 hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms figure 15. total switching loss vs case temperature figure 16. total switching loss vs gate resistance typical performance curves unless otherwise specified (continued) 80 60 70 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 120 100 110 90 v ge = 12v, v ge = 15v, t j = 25 o c v ge = 12v, v ge = 15v, t j = 125 o c r g = 3 , l = 500 h, v ce = 390v 15 10 20 25 30 35 40 5 i ce , collector to emitter current (a) t fi , fall time (ns) 16 32 24 48 64 40 56 r g = 3 , l = 500 h, v ce = 390v 72 80 15 10 20 25 30 35 40 5 t j = 125 o c, v ge = 12v or 15v t j = 25 o c, v ge = 12v or 15v i ce , collector to emitter current (a) 0 80 120 7 8 9 10 12 v ge , gate to emitter voltage (v) 11 160 200 240 6 pulse duration = 250 s duty cycle < 0.5%, v ce = 10v t j = 125 o c t j = -55 o c t j = 25 o c 40 v ge , gate to emitter voltage (v) q g , gate charge (nc) 2 14 0 4 10 i g(ref) = 1ma, r l = 15 , t j = 25 o c v ce = 200v 6 8 12 16 v ce = 600v 20 40 60 80 120 100 140 160 0 i g(ref) = 1ma, r l = 15 , t j = 25 o c v ce = 400v 0 0.2 0.4 50 75 100 t c , case temperature ( o c) 0.6 1.0 125 25 150 1.8 0.8 e total , total switching energy loss (mj) 1.4 1.2 1.6 i ce = 30a i ce = 20a e total = e on2 + e off r g = 3 , l = 500 h, v ce = 390v, v ge = 15v i ce = 10a 0.1 10 100 r g , gate resistance ( ) 1 3 1000 e total , total switching energy loss (mj) 10 t j = 125 o c, l = 500 h, v ce = 390v, v ge = 15v e total = e on2 + e off i ce = 10a i ce = 20a i ce = 30a hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 figure 17. capacitance vs collector to emitter voltage figure 18. collector to emitter on-state voltage vs gate to emitter voltage figure 19. diode forward current vs forward voltage drop figure 20. recovery times vs forward current figure 21. recovery times vs rate of change of current figure 22. stored charge vs rate of change of current typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) 0 20406080100 0 1 3 4 5 2 frequency = 1mhz c ies c oes c res v ge , gate to emitter voltage (v) 89 1.7 10 12 1.8 2.0 1.9 11 13 14 15 16 2.1 2.2 v ce , collector to emitter voltage (v) i ce = 30a i ce = 20a i ce = 10a duty cycle < 0.5%, t j = 25 o c pulse duration = 250 s 0.5 1.0 1.5 2.5 3.0 i ec , forward current (a) v ec , forward voltage (v) 02.0 0 10 15 20 25 25 o c 125 o c 5 30 pulse duration = 250 s duty cycle < 0.5%, 60 40 20 0 t rr , recovery times (ns) i ec , forward current (a) 0 80 50 30 10 4 8 16 20 di ec /dt = 200a/ s 125 o c t rr 25 o c t b 25 o c t a 25 o c t rr 90 70 12 125 o c t a 125 o c t b 300 400 500 700 800 t rr , recovery times (ns) di ec /dt, rate of change of current (a/ s) 200 600 0 40 10 20 30 50 900 1000 i ec = 20a, v ce = 390v 125 o c t a 125 o c t b 25 o c t a 25 o c t b 600 400 200 0 qrr, reverse recovery charge (nc) di ec /dt, rate of change of current (a/ s) 1000 500 200 300 400 900 800 600 700 800 25 o c, i ec = 10a 125 o c, i ec = 20a 125 o c, i ec = 10a 25 o c, i ec = 20a v ce = 390v hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 figure 23. igbt normalized transient thermal response, junction to case typical performance curves unless otherwise specified (continued) t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.1 0.2 0.5 0.05 0.01 0.02 test circuit and waveforms figure 24. inductive switching test circuit figure 25. switching test waveforms r g = 3 l = 500 h v dd = 390v + - hgtg20N60A4D dut diode ta49372 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtg20N60A4D free datasheet http:///
?2009 fairchild semiconductor corporation hgtg20N60A4D rev. c1 handling precautions for igbts insulated gate bipolar tran sistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and cons umer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 25. device turn-off delay can establish an additional frequency limiting condition for an a pplication other than t jm . t d(off)i is important when controllin g output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 25. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtg20N60A4D free datasheet http:///
rev. i5 trademarks the following are registered and unregistered trademarks fair child semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or u se of any product or circuit described herein; neither does it convey any license under it s patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? coolfet? crossvolt? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet c ontains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. free datasheet http:///
|
